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| 2SK1093 Silicon N-Channel MOS FET Application TO-220FM High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device - Can be driven from 5 V source * Suitable for motor drive, DC-DC converter, power switch and solenoid drive * * * * 2 12 3 1 1. Gate 2. Drain 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)* IDR Pch** Tch Tstg Ratings 60 20 10 40 10 20 150 -55 to +150 Unit V V A A A W C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- * PW 10 s, duty cycle 1 % ** Value at TC = 25 C 2SK1093 Table 2 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) Min 60 Typ -- Max -- Unit V Test conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 50 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 5 A, VGS = 10 V * -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 20 -- -- V -------------------------------------------------------------------------------------- -- -- 1.0 -- -- -- -- 0.12 0.17 Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time * Pulse Test See characteristic curves of 2SK970. |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr 3.5 -- -- -- -- -- -- -- -- 6.0 400 220 60 5 55 140 90 1.2 10 250 2.0 0.15 0.22 -- -- -- -- -- -- -- -- -- S pF pF pF ns ns ns ns V IF = 10 A, VGS = 0 IF = 10 A, VGS = 0, diF/dt = 50 A/s ID = 5 A, VGS = 10 V, RL = 6 A A V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------- --------------------- ID = 5 A, VGS = 4 V * ID = 5 A, VDS = 10 V * VDS = 10 V, VGS = 0, f = 1 MHz -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -- 125 -- ns -------------------------------------------------------------------------------------- 2SK1093 Power vs. Temperature Derating 30 Channel Dissipation Pch (W) 100 Maximum Safe Operation Area 10 30 Drain Current ID (A) 10 s 0 20 10 3 1.0 0.3 DC s PW = pe ra tio n O 1 (T o Sh s m s (1 m C 10 10 = t) 25 Operation in this area is limited by RDS (on) Ta = 25C C ) 0 50 100 Case Temperature TC (C) 150 0.1 0.1 30 100 0.3 1.0 3 10 Drain to Source Voltage VDS (V) Normalized Transient Thermal Impedance s (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 1.0 D=1 0.5 0.3 0.1 TC = 25C 0.2 0.1 0.05 0.03 0.01 10 0.02 0.01 1S ho ch-c (t) = s (t) * ch-c ch-c = 6.25C/W, TC = 25C PDM lse t Pu PW T 1m 10 m Pulse Width PW (s) 100 m 1 D =PW T 100 10 |
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